document number: 81195 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.1, 13-jul-10 1 low capacitance, single-line esd-protection diode VBUS051CD-HD1 vishay semiconductors marking (example only) bar = cathode marking x = date code y = type code (see table below) features ? ultra compact llp1006-2l package ? low package height < 0.4 mm ? 1-line esd-protection ? low leakage current < 0.1 a ? low load capacitance cd = 0.6 pf ? esd-protection to iec 61000-4-2 9 kv contact discharge 9 kv air discharge ? high surge current acc. iec61000-4-5 i pp > 2 a ? soldering can be checked by standard vision inspection. no x-ray necessary ? pin plating nipdau (e4) no whisker growth ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20855 20856 2 1 21121 xy ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VBUS051CD-HD1 VBUS051CD-HD1-g-08 8000 8000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VBUS051CD-HD1 llp1006-2l t 0.72 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings parameter test conditions symbol value unit peak pulse current a cc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 2a peak pulse power a cc. iec 61000-4-5; t p = 8/20 s; single shot p pp 28 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 9 kv air discharge acc. iec 61000-4-2; 10 pulses v esd 9 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 40 to + 150 c ** please see document vishay material category policy: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81195 2 rev. 1.1, 13-jul-10 VBUS051CD-HD1 vishay semiconductors low capacitance, single-line esd-protection diode note ? bias mode: each input (pin 1; 3 - pin 6) to ground (pin 2). application note the VBUS051CD-HD1 is an esd-protection device with the characteristic of a z-diode with a high esd-immunity and a very low capacitance which makes it usable for high frequency applications like usb2.0 or hdmi. with the VBUS051CD-HD1 one high speed data line can be protected against transient voltage signals like esd (electro static discharge). connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground level while positive transients will be clamped clos abov e the 5.5 v working range. the clamping behaviour of the VBUS051CD-HD1 is bidirectional but asymmetrical (bias) and so it offers the best protection for applications running up to 5 v. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 ? /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li ne which can be protected n lines --1lines reverse stand-off voltage at i r = 1 a pin 2 to pin 1 v rwm 5.5 - - v reverse current at v r = v rwm = 5.5 v; pin 2 to pin 1 i r - < 0.01 0.1 a reverse breakdown voltage at i r = 1 ma pin 2 to pin 1 v br 6.5 7.6 8.5 v reverse clamping voltage at i pp = 2 a; acc. iec 61000-4-5 pin 2 to pin 1 v c 14 v forward clamping voltage at i f = 2 a; acc. iec 61000-4-5 pin 1 to pin 2 v f 2.6 3.5 v capacitance at v r = 0 v; f = 1 mhz pin 2 to pin 1 c d 0.6 0.8 pf 0 % 20 % 40 % 60 % 80 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 80 90 100 time (ns) discharge current i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 v r (v) c d (pf) 21894 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 01234 f = 1 mhz
document number: 81195 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.1, 13-jul-10 3 VBUS051CD-HD1 low capacitance, single-line esd-protection diode vishay semiconductors fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical forward current i f vs. forward voltage v f fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 7 - typical clampi ng performanc e at + 8 kv contact discharge (acc. iec 61000-4-2) fig. 8 - typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) 0 % 20 % 40 % 60 % 80 % 100 % 010203040 time (s) i ppm 20 s to 50 % 8 s to 100 % 20548 i pp (a) v c (v) 21897 - 4 - 2 0 2 4 6 8 10 12 14 16 0123 measured acc. iec 61000-4-5 (8/20 s - wave form) v c positive surge negative surge v f (v) i f (ma) 21895 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 10 2 1 0.4 0.6 0.8 1 1.2 i r (a) v r (v) 21896 0 1 2 3 4 5 6 7 8 9 0.01 0.1 1 10 100 1000 10 000 21900 v c-esd (v) v esd (kv) - 200 - 150 - 100 - 50 0 50 100 150 200 0 5 10 15 20 v c-esd acc. iec 61000-4-2 contact discharge t (ns) v c-esd (v) 21898 - 20 0 20 40 60 80 100 - 10 0 10 20 30 40 50 60 70 80 90 acc. iec 61000-4-2 + 8 kv contact discharge
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81195 4 rev. 1.1, 13-jul-10 VBUS051CD-HD1 vishay semiconductors low capacitance, single-line esd-protection diode fig. 9 - typical peak clamping voltage at esd contact discharge (acc. iec 61000-4-2) package dimensions in millimeters (inches): llp1006-2l t (ns) v c-esd (v) 21899 - 100 - 80 - 60 - 40 - 20 0 20 - 10 0 10 20 30 40 50 60 70 80 90 acc. iec 61000-4-2 - 8 kv contact discharge 20812 document no.:s8-v-3906.04-005 (4) 0.55 (0.022) 0.45 (0.018) 0.25 (0.010) 0.15 (0.006) 0.45 (0.018) 0.35 (0.014) 0.3 (0.012) 0.2 (0.008) 0.4 (0.016) 0.33 (0.013) 1.05 (0.041) 0.95 (0.037) 0.05 (0.002) 0 (0.000) 0.125 (0.005) ref. 0.65 (0.026) 0.55 (0.022) 0.05 (0.002) 0.25 (0.010) 0.5 (0.020) 1 (0.039) 0.5 [0.020] 0.6 (0.024) 0.2 (0.008) rev. 4 - date: 12. sept. 2008 created - date: 13. july. 2007 orientation identification foot print recommendation: solder resist mask solder pad soldermask opening 0.03 measured middle of the package
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